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SW3N80 Datasheet, Equivalent, N-channel MOSFET.N-channel MOSFET N-channel MOSFET |
　
　
　
| Part | SW3N80 |
|---|---|
| Description | N-channel MOSFET |
| Feature | www. DataSheet. co. kr SAMWIN SW3N80 N-ch annel MOSFET BVDSS : 800V ID : 3. 0A RDS (ON) : 4. 5ohm 1 2 1 3 2 2 Features â– High ruggedness â– RDS(ON) (Max 4. 5 â „¦)@VGS=10V â– Gate Charge (Typ 26nC) â– Improved dv/dt Capability â– 100% Avalanche Tested TO-220F TO-220 3 1 1. Gate 2. Drain 3. Source General De scription This power MOSFET is produced with advanced VDMOS technology of SAMW IN. This technology enable power MOSFET to have better characteristics, such a s fast switching time, low on resistanc e, low gate charge and especially excel lent avalanche characteristics. This po wer MOSFET is usually used . |
| Manufacture | Samwin |
| Datasheet |
| Part | SW3N80 |
|---|---|
| Description | N-channel MOSFET |
| Feature | www. DataSheet. co. kr SAMWIN SW3N80 N-ch annel MOSFET BVDSS : 800V ID : 3. 0A RDS (ON) : 4. 5ohm 1 2 1 3 2 2 Features â– High ruggedness â– RDS(ON) (Max 4. 5 â „¦)@VGS=10V â– Gate Charge (Typ 26nC) â– Improved dv/dt Capability â– 100% Avalanche Tested TO-220F TO-220 3 1 1. Gate 2. Drain 3. Source General De scription This power MOSFET is produced with advanced VDMOS technology of SAMW IN. This technology enable power MOSFET to have better characteristics, such a s fast switching time, low on resistanc e, low gate charge and especially excel lent avalanche characteristics. This po wer MOSFET is usually used . |
| Manufacture | Samwin |
| Datasheet |
　
　
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