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SW3N80A Datasheet, Equivalent, N-channel MOSFET.N-channel MOSFET N-channel MOSFET |
| Part | SW3N80A |
|---|---|
| Description | N-channel MOSFET |
| Feature | www. DataSheet. co. kr SAMWIN SW3N80A N-c hannel MOSFET BVDSS : 800V ID : 3. 0A RD S(ON) : 4. 5ohm 1 2 1 1 2 3 2 3 1 3 2 F eatures ■ High ruggedness ■ RDS(ON) (Max 4. 5 Ω)@VGS=10V ■ Gate Charge (Typ 26nC) ■ Improved dv/dt Capabilit y ■ 100% Avalanche Tested TO-220F T O-220 TO-252 3 1. Gate 2. Drain 3. S ource General Description This power M OSFET is produced with advanced VDMOS t echnology of SAMWIN. This technology en able power MOSFET to have better charac teristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche charact eristics. This power MOSFE . |
| Manufacture | Samwin |
| Datasheet |
| Part | SW3N80A |
|---|---|
| Description | N-channel MOSFET |
| Feature | www. DataSheet. co. kr SAMWIN SW3N80A N-c hannel MOSFET BVDSS : 800V ID : 3. 0A RD S(ON) : 4. 5ohm 1 2 1 1 2 3 2 3 1 3 2 F eatures ■ High ruggedness ■ RDS(ON) (Max 4. 5 Ω)@VGS=10V ■ Gate Charge (Typ 26nC) ■ Improved dv/dt Capabilit y ■ 100% Avalanche Tested TO-220F T O-220 TO-252 3 1. Gate 2. Drain 3. S ource General Description This power M OSFET is produced with advanced VDMOS t echnology of SAMWIN. This technology en able power MOSFET to have better charac teristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche charact eristics. This power MOSFE . |
| Manufacture | Samwin |
| Datasheet |
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