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2SC3355 Datasheet, Equivalent, Silicon Transistor.

NPN Silicon Transistor

NPN Silicon Transistor

 

 

 

Part 2SC3355
Description NPN Silicon Transistor
Feature DATA SHEET SHEET DATA SILICON TRANSISTO R 2SC3355 HIGH FREQUENCY LOW NOISE AMP LIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN sil icon epitaxial transistor designed for low noise amplifier at VHF, UHF and CAT V band.
It has lange dynamic range and good current characteristic.
PACKAGE DI MENSIONS in millimeters (inches) 5.
2 MA X.
(0.
204 MAX.
) FEATURES
• Low Noise and High Gain NF = 1.
1 dB TYP.
, Ga = 8 .
0 dB TYP.
@VCE = 10 V, IC = 7 mA, f = 1.
0 GHz NF = 1.
1 dB TYP.
, Ga = 9.
0 dB T YP.
@VCE = 10 V, IC = 40 mA, f = 1.
0 GH z
• High Power Gain MAG = 11 dB TYP.
@VCE = 10 V, IC = .
Manufacture NEC
Datasheet
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Part 2SC3355
Description NPN Silicon Transistor
Feature DATA SHEET SHEET DATA SILICON TRANSISTO R 2SC3355 HIGH FREQUENCY LOW NOISE AMP LIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN sil icon epitaxial transistor designed for low noise amplifier at VHF, UHF and CAT V band.
It has lange dynamic range and good current characteristic.
PACKAGE DI MENSIONS in millimeters (inches) 5.
2 MA X.
(0.
204 MAX.
) FEATURES
• Low Noise and High Gain NF = 1.
1 dB TYP.
, Ga = 8 .
0 dB TYP.
@VCE = 10 V, IC = 7 mA, f = 1.
0 GHz NF = 1.
1 dB TYP.
, Ga = 9.
0 dB T YP.
@VCE = 10 V, IC = 40 mA, f = 1.
0 GH z
• High Power Gain MAG = 11 dB TYP.
@VCE = 10 V, IC = .
Manufacture NEC
Datasheet
Download 2SC3355 Datasheet

2SC3355

2SC3355
2SC3355

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