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2SC3355 Datasheet, Equivalent, Silicon Transistor.NPN Silicon Transistor NPN Silicon Transistor |
| Part | 2SC3355 |
|---|---|
| Description | NPN Silicon Transistor |
| Feature | DATA SHEET SHEET DATA
SILICON TRANSISTO R
2SC3355
HIGH FREQUENCY LOW NOISE AMP LIFIER NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC3355 is an NPN sil icon epitaxial transistor designed for low noise amplifier at VHF, UHF and CAT V band. It has lange dynamic range and good current characteristic. PACKAGE DI MENSIONS in millimeters (inches) 5. 2 MA X. (0. 204 MAX. ) FEATURES • Low Noise and High Gain NF = 1. 1 dB TYP. , Ga = 8 . 0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1. 0 GHz NF = 1. 1 dB TYP. , Ga = 9. 0 dB T YP. @VCE = 10 V, IC = 40 mA, f = 1. 0 GH z • High Power Gain MAG = 11 dB TYP. @VCE = 10 V, IC = . |
| Manufacture | NEC |
| Datasheet |
| Part | 2SC3355 |
|---|---|
| Description | NPN Silicon Transistor |
| Feature | DATA SHEET SHEET DATA
SILICON TRANSISTO R
2SC3355
HIGH FREQUENCY LOW NOISE AMP LIFIER NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC3355 is an NPN sil icon epitaxial transistor designed for low noise amplifier at VHF, UHF and CAT V band. It has lange dynamic range and good current characteristic. PACKAGE DI MENSIONS in millimeters (inches) 5. 2 MA X. (0. 204 MAX. ) FEATURES • Low Noise and High Gain NF = 1. 1 dB TYP. , Ga = 8 . 0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1. 0 GHz NF = 1. 1 dB TYP. , Ga = 9. 0 dB T YP. @VCE = 10 V, IC = 40 mA, f = 1. 0 GH z • High Power Gain MAG = 11 dB TYP. @VCE = 10 V, IC = . |
| Manufacture | NEC |
| Datasheet |
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