DATA SHEET SHEET DATA
SILICON TRANSISTOR
2SC3356
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
DESCR...
DATA SHEET SHEET DATA
SILICON
TRANSISTOR
2SC3356
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL
TRANSISTOR
DESCRIPTION
The 2SC3356 is an
NPN silicon epitaxial
transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic.
0.4 −0.05
+0.1
PACKAGE DIMENSIONS (Units: mm)
2.8±0.2 1.5 0.65 −0.15
+0.1
FEATURES
Low Noise and High Gain
0.95 0.95 2.9±0.2
NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
2
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg
65
20 12 3.0 100 200 150 to +150
V V V mA mW
C C
0.3
Marking
1.1 to 1.4
PIN CONNECTIONS 1. Emitter 2. Base 3. Collector
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed-Back Capacitance Insertion Power Gain Noise Figure SYMBOL ICBO IEBO hFE* fT Cre** 50 120 7 0.55 11.5 1.1 2.0 1.0 MIN. TYP. MAX. 1.0 1.0 300 GHz pF dB dB UNIT TEST CONDITIONS VCB = 10 V, IE = 0 VEB = 1.0 V, IC = 0 VCE = 10 V, IC = 20 mA VCE = 10 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1.0 MHz VCE = 10 V, IC = 20 mA, f = 1.0 GHz VCE = 10 V, IC = 7 mA, f = 1.0 GHz
A A
S21e2
NF
*
Pulse Measurement PW 350 s, Duty Cycle...