2SC3357

DATA SHEET SILICON TRANSISTOR 2SC3357 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION The 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic. 4.5±0.1 PACKAGE DIMENSIONS (Unit: mm) FEATURES Low Noise and High Gain IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz Large PT in Small Package PT : 2 W with 16 cm2 × 0.7 mm Ceramic Substrate. NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, 0.8 MIN. E 0.42 ±0.06 1.6±0.2 1.5±0.1 C B 0.42±0.06 1.5 0.47 ±0.06 3.0 0.41 +0.05 −0.03 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Thermal Resistance Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT * Rth(j-a)* Tj Tstg 20 12 3.0 100 1.2 62.5 150 −65 to +150 V V V mA W °C/W °C °C Term, Connection E : Emitter C : Collector (Fin) B : Base (SOT-89) * mounted on 16 cm2 × 0.7 mm Ceramic Substrate Document No. P10357EJ4V1DS00 (4th edition) Date Published March 1997 N Printed in Japan 4.0±0.25 2.5±0.1 © 1985 2SC3357 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed-Back Capacitance Insertion Power Gain Noise Figure Noise Figure SYMBOL ICBO IEBO hFE* fT Cre** S21e NF NF 2 MIN. TYP. MAX. ...