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SWD1N60 Datasheet, Equivalent, N-Channel MOSFET.N-Channel MOSFET N-Channel MOSFET |
| Part | SWD1N60 |
|---|---|
| Description | N-Channel MOSFET |
| Feature | www. DataSheet. co. kr SAMWIN SW1N60 N-ch annel MOSFET BVDSS : 600V ID : 1. 0A RDS (ON) : 12ohm 1 1 2 2 3 3 1 2 2 3 1 3 F eatures ■ High ruggedness ■ RDS(ON) (Max 12 Ω)@VGS=10V ■ Gate Charge ( Max 6nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-251 TO-2 52 TO-126 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technol ogy of SAMWIN. This technology enable p ower MOSFET to have better characterist ics, such as fast switching time, low o n resistance, low gate charge and espec ially excellent avalanche characteristi cs. This power MOSFET is u . |
| Manufacture | Samwin |
| Datasheet |
| Part | SWD1N60 |
|---|---|
| Description | N-Channel MOSFET |
| Feature | www. DataSheet. co. kr SAMWIN SW1N60 N-ch annel MOSFET BVDSS : 600V ID : 1. 0A RDS (ON) : 12ohm 1 1 2 2 3 3 1 2 2 3 1 3 F eatures ■ High ruggedness ■ RDS(ON) (Max 12 Ω)@VGS=10V ■ Gate Charge ( Max 6nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-251 TO-2 52 TO-126 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technol ogy of SAMWIN. This technology enable p ower MOSFET to have better characterist ics, such as fast switching time, low o n resistance, low gate charge and espec ially excellent avalanche characteristi cs. This power MOSFET is u . |
| Manufacture | Samwin |
| Datasheet |
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