DatasheetsPDF.com

2SC3380

Hitachi Semiconductor

Silicon NPN Triple Diffused Transistor

2SC3380 Silicon NPN Triple Diffused Application • High frequency high voltage amplifier • High voltage switch Outline ...


Hitachi Semiconductor

2SC3380

File Download Download 2SC3380 Datasheet


Description
2SC3380 Silicon NPN Triple Diffused Application High frequency high voltage amplifier High voltage switch Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SC3380 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Note: Symbol VCBO VCEO VEBO IC PC * Tj Tstg 1 Ratings 300 300 5 100 1 150 –55 to +150 Unit V V V mA W °C °C 1. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Collector to emitter saturation voltage DC current transfer ratio Gain bandwidth product Collector output capacitance Note: Marking is “AS”. Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CEO VCE(sat) hFE fT Cob Min 300 300 5 — — 30 — — Typ — — — — — — 80 — Max — — — 1 1.5 200 — 4 MHz pF Unit V V V µA V Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCE = 250 V, RBE = ∞ I C = 20 mA, IB = 2 mA VCE = 20 V, IC = 20 mA VCE = 20 V, IC = 20 mA VCB = 20 V, IE = 0, f = 1 MHz 2 2SC3380 Maximum Collector Dissipation Curve 1.2 Collector Power Dissipation PC (W) (on the alumina ceramic board) Collector Current IC (mA) Typical Output Characteristics 1.0 14 12 10 0.6 9 8 4 0.2 2 µA IB = 0 0 100 150 50 Ambient Temperature Ta (°C)...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)