N-Channel Enhancement Mode Field Effect Transistor
Description
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N-Channel Enhancement Mode Field Effect Transistor FEATURES
600V, 1A, RDS(ON) = 9.3 Ω @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TO-92(Bulk) & TO-92(Ammopack) package.
CEK01N6G
D
G
G D G
S
D
TO-92(Ammopack)
S
TO-92(Bulk)
S
ABSOLUTE MAXIMUM RATINGS
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