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CEM2539 Datasheet, Equivalent, Effect Transistor.Dual Enhancement Mode Field Effect Transistor Dual Enhancement Mode Field Effect Transistor |
| Part | CEM2539 |
|---|---|
| Description | Dual Enhancement Mode Field Effect Transistor |
| Feature | www. DataSheet. co. kr Dual Enhancement Mo de Field Effect Transistor (N and P Cha nnel) CEM2539 D1 D2 FEATURES 20V, 7. 5 A, RDS(ON) = 22mΩ @VGS = 10V. RDS(ON) = 24mΩ @VGS = 4. 5V. RDS(ON) = 33mΩ @VGS = 2. 5V. -20V, -4. 0A, RDS(ON) = 80 mΩ @VGS = -10V. RDS(ON) = 100mΩ @VG S = -4. 5V. RDS(ON) = 150mΩ @VGS = -2. 5V. Super high dense cell design for ex tremely low RDS(ON). High power and cur rent handing capability. Lead free prod uct is acquired. Surface mount Package. SO-8 1 D1 8 5 G1 *1K G2 S1 D1 7 D 2 6 D2 5 S2 1 S1 2 G1 3 S2 4 G2 A BSOLUTE MAXIMUM RATINGS Parameter Drain -Source Voltage Gate-Sourc . |
| Manufacture | CET |
| Datasheet |
| Part | CEM2539 |
|---|---|
| Description | Dual Enhancement Mode Field Effect Transistor |
| Feature | www. DataSheet. co. kr Dual Enhancement Mo de Field Effect Transistor (N and P Cha nnel) CEM2539 D1 D2 FEATURES 20V, 7. 5 A, RDS(ON) = 22mΩ @VGS = 10V. RDS(ON) = 24mΩ @VGS = 4. 5V. RDS(ON) = 33mΩ @VGS = 2. 5V. -20V, -4. 0A, RDS(ON) = 80 mΩ @VGS = -10V. RDS(ON) = 100mΩ @VG S = -4. 5V. RDS(ON) = 150mΩ @VGS = -2. 5V. Super high dense cell design for ex tremely low RDS(ON). High power and cur rent handing capability. Lead free prod uct is acquired. Surface mount Package. SO-8 1 D1 8 5 G1 *1K G2 S1 D1 7 D 2 6 D2 5 S2 1 S1 2 G1 3 S2 4 G2 A BSOLUTE MAXIMUM RATINGS Parameter Drain -Source Voltage Gate-Sourc . |
| Manufacture | CET |
| Datasheet |
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