2SC3382

www.DataSheet.co.kr Ordering number:EN1942A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1391/2SC3382 Low Noise AF Amp Applications Features · Adoption of FBET process. · AF amp. · Low-noise use. Noise Test Circuit Package Dimensions unit:mm 2003A [2SA1391/2SC3382] ( ) : 2SA1391 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions JEDEC : TO-92 EIAJ : SC-43 SANYO : NP B : Base C : Collector E : Emitter Ratings (–)60 (–)50 (–)6 (–)200 (–)400 400 150 –55 to +150 Unit V V V mA mA mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE1 hFE2 fT VCB=(–)40V, IE=0 VEB=(–)5V, IC=0 VCE=(–)6V, IC=(–)1mA VCE=(–)6V, IC=(–)0.1mA VCE=(–)6V, IC=(–)10mA 100* 70 250 (200) Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Output Capacitance Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Votage Noise Level Noise Peak Level VCE(sat) VBE(sat) Cob V(BR)CBO V(BR)CEO V(BR)EBO VNO(ave) IC=(–)100mA, IB=(–)10mA IC=(–)100mA, IB=(–)10mA VCB=(–)6V, f=1MHz IC=(–)10µA, IE=0 IC=(–)1mA, RBE=∞ IE=(–)10µA, IC=0 VCC=(–)30V, IC=(–)1mA, Rg=56kΩ, VG=77dB/1kHz (–)60 (–)50 ...