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2SC3383 Dataheets PDF



Part Number 2SC3383
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet 2SC3383 Datasheet2SC3383 Datasheet (PDF)

Ordering number:EN1943A Features · Adoption of FBET process. · AF amp. PNP/NPN Epitaxial Planar Silicon Transistors 2SA1392/2SC3383 AF Amp Applications Package Dimensions unit:mm 2003A [2SA1392/2SC3383] ( ) : 2SA1392 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP .

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Ordering number:EN1943A Features · Adoption of FBET process. · AF amp. PNP/NPN Epitaxial Planar Silicon Transistors 2SA1392/2SC3383 AF Amp Applications Package Dimensions unit:mm 2003A [2SA1392/2SC3383] ( ) : 2SA1392 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C JEDEC : TO-92 EIAJ : SC-43 SANYO : NF Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol Conditions ICBO IEBO hFE1 hFE2 fT VCB=(–)40V, IE=0 VEB=(–)5V, IC=0 VCE=(–)6V, IC=(–)1mA VCE=(–)6V, IC=(–)0.1mA VCE=(–)6V, IC=(–)10mA Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Output Capacitance VCE(sat) VBE(sat) Cob IC=(–)100mA, IB=(–)10mA IC=(–)100mA, IB=(–)10mA VCB=(–)6V, f=1MHz Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Votage V(BR)CBO V(BR)CEO V(BR)EBO IC=(–)10µA, IE=0 IC=(–)1mA, RBE=∞ IE=(–)10µA, IC=0 * : The 2SA1392/2SC3383 are classified by 1mA hFE as follows : 100 R 200 140 S 280 200 T 400 280 U 560 B : Base C : Collector E : Emitter Ratings (–)60 (–)50 (–)6 (–)200 (–)400 400 150 –55 to +150 Unit V V V mA mA mW ˚C ˚C Ratings min typ 100* 70 250 (200) (–)60 (–)50 (–)6 2.7 (3.7) max (–)0.1 (–)0.1 560* (–)0.3 (–)1.0 Unit µA µA MHz MHz V V pF pF V V V SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71598HA (KT)/4277TA, TS No.1943-1/4 2SA1392/2SC3383 No.1943-2/4 2SA1392/2SC3383 No.1943-3/4 2SA1392/2SC3383 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 1998. Specifications and information herein are subject to change without notice. PS No.1943-4/4 .


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