ZXMHN6A07T8

www.DataSheet.co.kr ZXMHN6A07T8 60V N-CHANNEL MOSFET H-BRIDGE SUMMARY V(BR)DSS= 60V : RDS(on)= 0.3 ; ID= 1.6A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES · Compact package · Low on state losses · Low drive requirements · Operates up to 60V · 1 Amp continuous rating SM8 APPLICATIONS · Motor control ORDERING INFORMATION DEVICE ZXMHN6 A0 7 T8 TA ZXMHN6 A0 7 T8 TC REEL SIZE 7” 13” TAPE WIDTH 12mm 12mm QUANTITY PER REEL 1,000 units 4,000 units PINOUT DEVICE MARKING · ZXMH N6A07 TOP VIEW ISSUE 2 - MAY 2004 1 SEMICONDUCTORS Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr ZXMHN6A07T8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-source voltage Gate-source voltage SYMBOL V DSS V GS LIMIT 60 ± 20 1.6 1.3 1.4 I DM IS I SM PTOT 1.1 1.4 1.6 W W W (c) UNIT V V A A A A A A Continuous drain current (V GS= 1 0 V; T A = 2 5 ° C)(b) (d) I D (V GS= 1 0 V; T A = 7 0 ° C)(b) (d) (V GS= 1 0 V; T A = 2 5 ° C)(a) (d) Pulsed drain current (c) 9 1 9 Continuous source current (body diode) (b) (d) Pulsed source current (body diode) Any Single transistor " on" (a) (d) Single transistor ‘ on’ (b) (d) Two transistors ‘ on’ equally (a) (e) Linear derating factor above 2 5 ° C (a) Single transistor " on" (a) (d) Single transistor ‘ on’ (b) (d) Two transistors ‘ on’ equa...