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2SC3391 Dataheets PDF



Part Number 2SC3391
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon NPN Epitaxial Planar Transistor
Datasheet 2SC3391 Datasheet2SC3391 Datasheet (PDF)

2SC3391 Silicon NPN Epitaxial Planar Application VHF amplifier, Mixer, Local oscillator Outline SPAK 1 23 1. Emitter 2. Collector 3. Base 2SC3391 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 4 20 200 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) It.

  2SC3391   2SC3391



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2SC3391 Silicon NPN Epitaxial Planar Application VHF amplifier, Mixer, Local oscillator Outline SPAK 1 23 1. Emitter 2. Collector 3. Base 2SC3391 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 4 20 200 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Power gain Noise figure Note: B 60 to 120 Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO hFE* VBE VCE(sat) fT Cob PG NF 1 Min 30 20 4 — 60 — — 450 — 17 — Typ — — — — — 0.72 0.17 940 0.9 20 3.5 Max — — — 0.5 200 — — — 1.2 — 5.5 Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 10 V, IE = 0 VCE = 6 V, IC = 1 mA V V MHz pF dB dB VCE = 6 V, IC = 1 mA I C = 20 mA, IB = 4 mA VCE = 6 V, IC = 5 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 1 mA, f = 100 MHz VCE = 6 V, IC = 1 mA, Rg = 50 Ω, f = 100 MHz 1. The 2SC3391 is grouped by h FE as follows. C 100 to 200 See characteristic curves of 2SC535. 2 2SC3391 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 300 200 100 0 50 100 Ambient Temperature Ta (°C) 150 3 4.2 Max 1.8 Max 3.2 Max 2.2 Max Unit: mm 0.45 ± 0.1 14.5 Min 0.6 0.6 Max 0.4 ± 0.1 1.27 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) SPAK — — 0.10 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, hea.


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