Ordering number:EN1392A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1339/2SC3393
High-Speed Switching Applications...
Ordering number:EN1392A
PNP/
NPN Epitaxial Planar Silicon
Transistors
2SA1339/2SC3393
High-Speed Switching Applications
Features
· Very small-sized package permitting sets to be smallsized, slim. · High breakdown voltage : VCEO=(–)50V. · Complementary pair
transistor having large current capacity and high fT. · Adoption of FBET process. Switching Time Test Circuit
Package Dimensions
unit:mm 2033
[2SA1339/2SC3393]
( ) : 2SA1339
(For
PNP, the polarity is reversed) Unit (resistance : Ω, capacitance : F)
B : Base C : Collector E : Emitter SANYO : SPA
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions
Ratings (–)60 (–)50 (–)5 (–)500 (–)800 300 150 –55 to +150
Unit V V V mA mA mW
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Common Base Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol ICBO IEBO hFE fT Cob VCE(sat) VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, IC=(–)10mA VCE=(–)10V, IC=(–)50mA VCB=(–)10V, f=1MHz IC=(–)100mA, IB=(–)10mA 100* 3...