FMP20N60S1

FMP20N60S1 Super J-MOS series http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET N-Channel enhancement mode power MOSFET Features Pb-free lead terminal RoHS compliant Applications For switching Outline Drawings [mm] TO-220 П3.6± 0.2 10 +0.5 0 4.5±0.2 1.3±0.2 2.7 ±0.1 6.4 ±0.2 15 ± 0.2 3.6 ±0.2 13.5 min. 1.2 ± 0.2 1 2.54 ± 0.2 23 0.8 +0.2 -0.1 2.54± 0.2 PRE-SOLDER 0.4 +0.2 0 2.7±0.2 1 23 CONNECTION 1 GATE 2 DRAIN 3 SOURCE JEDEC : TO-220AB DIMENSIONS ARE IN MILLIMETERS. Maximum Ratings and Characteristics Absolute Maximum Ratings at TC=25°C (unless otherwise specified) Description Drain-Source Voltage Symbol VDS VDSX Continuous Drain Current ID Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt IDP VGS IAR EAS dVDS/dt dV/dt -di/dt Maximum Power Dissipation PD Operating and Storage Temperature range Tch Tstg Note *1 : Limited by maximum channel temperature. Note *2 : Tch≤150°C, See Fig.1 and Fig.2 Note *3 : Starting Tch=25°C, IAS=2A, L=216mH, VDD=60V, RG=50Ω, See Fig.1 and Fig.2 EAS limited by maximum channel temperature and avalanche current. Note *4 : IF≤-ID, -di/dt=100A/μs, VDD≤400V, Tch≤150°C. Note *5 : IF≤-ID, dV/dt=15kV/μs, VDD≤400V, Tch≤150°C. Characteristics 600 600 ±20 ±12.6 ±60 ±30 6.6 472.2 50 15 100 2.02 150 150 -55 to +150 Equivalent circuit schema...