FMV11N60E

www.DataSheet.co.kr FMV11N60E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability TO-220F(SLS) FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Equivalent circuit schematic Drain(D) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Gate(G) Source(S) Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt PD Tch Tstg Symbol BVDSS VGS (th) I DSS I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG Q GS Q GD I AV VSD trr Qrr Conditions I D =250µA, VGS =0V I D =250µA, VDS =VGS VDS =600V, VGS =0V VDS =480V, VGS =0V VGS =±30V, VDS =0V I D =5.5A, VGS =10V I D =5.5A, VDS =25V VDS =25V VGS =0V f=1MHz Vcc =300V VGS =10V I D =5.5A RG =15Ω Vcc =300V I D =11A VGS =10V L=2.64mH, Tch =25°C I F =11A, VGS =0V, Tch =25°C I F =11A, VGS =0V -di/dt=100A/µs, Tch=...