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FMV20N60S1 Datasheet, Equivalent, POWER MOSFET.N-CHANNEL SILICON POWER MOSFET N-CHANNEL SILICON POWER MOSFET |
　
　
　
| Part | FMV20N60S1 |
|---|---|
| Description | N-CHANNEL SILICON POWER MOSFET |
| Feature | FMV20N60S1
Super J-MOS series
http://ww w. fujielectric. com/products/semiconduct or/ FUJI POWER MOSFET N-Channel enhance ment mode power MOSFET Features Pb-fre e lead terminal RoHS compliant Applicat ions For switching Outline Drawings [m m] TO-220F(SLS) Connection 1 Gate 2 Dr ain 3 Source DIMENSIONS ARE IN MILLIME TERS. Maximum Ratings and Characterist ics Absolute Maximum Ratings at TC=25 °C (unless otherwise specified) Descri ption Drain-Source Voltage Continuous D rain Current Symbol VDS VDSX ID Pulse d Drain Current IDP Gate-Source Volta ge VGS Characteristics 600 600 ±20  ±12. 6 ±60 ±30 Re . |
| Manufacture | Fuji Electric |
| Datasheet |
| Part | FMV20N60S1 |
|---|---|
| Description | N-CHANNEL SILICON POWER MOSFET |
| Feature | FMV20N60S1
Super J-MOS series
http://ww w. fujielectric. com/products/semiconduct or/ FUJI POWER MOSFET N-Channel enhance ment mode power MOSFET Features Pb-fre e lead terminal RoHS compliant Applicat ions For switching Outline Drawings [m m] TO-220F(SLS) Connection 1 Gate 2 Dr ain 3 Source DIMENSIONS ARE IN MILLIME TERS. Maximum Ratings and Characterist ics Absolute Maximum Ratings at TC=25 °C (unless otherwise specified) Descri ption Drain-Source Voltage Continuous D rain Current Symbol VDS VDSX ID Pulse d Drain Current IDP Gate-Source Volta ge VGS Characteristics 600 600 ±20  ±12. 6 ±60 ±30 Re . |
| Manufacture | Fuji Electric |
| Datasheet |
　
　
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