FMV24N25G

www.DataSheet.co.kr http://www.fujisemi.com FMV24N25G Super FAP-G series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof TO-220F(SLS) FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Equivalent circuit schematic Drain(D) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Gate(G) Source(S) Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Maximum Power Dissipation Operating and Storage Temperature range Isolation Symbol VDS VDSX ID I DP VGS IAR E AS dVds/dt dV/dt PD Tch Tstg VISO Characteristics 250 220 ±24 ±96 ±30 24 192 20 5 2.16 65 150 -55 to +150 2 Unit V V A A V A mJ kV/µs kV/µs W °C °C KVrms Remarks VGS = -30V Note*1 Note*2 VDS=≤200V Note*3 Ta=25°C Tc=25°C t=60sec, f=60Hz Electrical Characteristics at Tc=25°C (unless otherwise specified) Static Ratings Description Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Char...