Automotive P-Channel MOSFET
www.DataSheet.co.kr
SQ1421EEH
www.vishay.com
Vishay Siliconix
Automotive P-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT S...
Description
www.DataSheet.co.kr
SQ1421EEH
www.vishay.com
Vishay Siliconix
Automotive P-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = - 10 V RDS(on) () at VGS = - 4.5 V ID (A) Configuration - 60 0.290 0.395 - 1.6 Single
FEATURES
Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET AEC-Q101 Qualifiedd 100 % Rg and UIS Tested Typical ESD Protection: 800 V Compliant to RoHS Directive 2002/95/EC
(1, 2, 5, 6) D
SOT-363 SC-70 (6-LEADS)
D 1 6 D Marking Code 9B XX YY D 2 5 D
(3) G
G
3 Top View
4
S
Lot Traceability and Date Code Part # Code
(4) S P-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free SC-70 SQ1421EEH-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb L = 0.1 mH TC = 25 °C TC = 125 °C Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb Operating Junction and Storage Temperature Range TC = 25 °Ca TC = 125 °C SYMBOL VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT - 60 ± 20 - 1.6 - 1.4 - 1.6 - 6.7 -8 3.2 3.3 1.1 - 55 to + 175 mJ W °C A UNIT V
THERMAL RESISTANCE RATINGS
PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. PCB ...
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