SQ1470EH

www.DataSheet.co.kr SQ1470EH www.vishay.com Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 4.5 V RDS(on) () at VGS = 2.5 V ID (A) Configuration 30 0.065 0.095 2.8 Single FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET AEC-Q101 Qualifiedd 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC SOT-363 SC-70 (6-LEADS) D 1 6 D Marking Code 9C G 3 4 S XX YY D 2 5 D D G Lot Traceability and Date Code Part # Code S N-Channel MOSFET Top View ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free SC-70 SQ1470EH-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Continuous Source Current (Diode Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 °C TC = 125 °C Conduction)a TC = 25 °C TC = 125 °C SYMBOL VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT 30 ± 12 2.8 2.8 2.8 11 10 5 3.3 1.1 - 55 to + 175 mJ W °C A UNIT V THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. PCB Mountc SYMBOL RthJA RthJF LIMIT 125 45 UNIT °C/W S11-2128 Rev. C, 31-Oct-11 ...