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SQ2360EES Dataheets PDF



Part Number SQ2360EES
Manufacturers Vishay
Logo Vishay
Description Automotive N-Channel MOSFET
Datasheet SQ2360EES DatasheetSQ2360EES Datasheet (PDF)

www.DataSheet.co.kr SQ2360EES www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration TO-236 (SOT-23) FEATURES 60 0.085 0.130 4.4 Single D • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested • Typical ESD Protection 800 V • Compliant to RoHS Directive 2002/95/EC G 1 3 D G S 2 Top View SQ2360E.

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www.DataSheet.co.kr SQ2360EES www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration TO-236 (SOT-23) FEATURES 60 0.085 0.130 4.4 Single D • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested • Typical ESD Protection 800 V • Compliant to RoHS Directive 2002/95/EC G 1 3 D G S 2 Top View SQ2360EES Marking Code: 8Mxxx S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free SOT-23 SQ2360EES-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) Pulsed Drain Currenta Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C SYMBOL VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT 60 ± 20 4.4 2.5 3.7 17 6 1.8 3 1 - 55 to + 175 mJ W °C A UNIT V THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. When mounted on 1" square PCB (FR-4 material). c. Parametric verification ongoing. PCB Mountb SYMBOL RthJA RthJF LIMIT 166 50 UNIT °C/W S11-2111-Rev. E, 07-Nov-11 1 Document Number: 65352 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr SQ2360EES www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VDS VGS(th) IGSS IDSS ID(on) VGS = 0, ID = 250 μA VDS = VGS, ID = 250 μA VDS = 0 V, VGS = ± 20 V VGS = 0 V VGS = 0 V VGS = 0 V VGS = 10 V VGS = 10 V Drain-Source On-State Resistancea RDS(on) VGS = 10 V VGS = 10 V VGS = 4.5 V Forward Transconductanceb Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Gate Resistance Turn-On Delay Rise Timec Turn-Off Delay Timec Fall Timec Pulsed Currenta Forward Voltage Timec Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf ISM VSD IF = 1.5 A, VGS = 0 VDD = 30 V, RL = 15  ID  2 A, VGEN = 10 V, Rg = 1  f = 1 MHz VGS = 10 V VDS = 30 V, ID = 2 A VGS = 0 V VDS = 25 V, f = 1 MHz 1.24 295 55 35 7.40 0.95 1.94 2.46 5 11 10 8 0.8 370 70 55 12 3.68 8 17 15 12 17 1.2 A V ns  nC pF gfs VDS = 60 V VDS = 60 V, TJ = 125 °C VDS = 60 V, TJ = 175 °C VDS5 V ID = 6 A, TJ = 25 °C ID = 6 A, TJ = 125 °C ID = 6 A, TJ = 175 °C ID = 5 A 60 1.5 10 0.058 0.081 5.8 2.5 ± 5.5 1 50 150 0.085 0.197 0.258 0.130 A   S μA V μA SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS = - 15 V, ID = 1.9 A Source-Drain Diode Ratings and Characteristicsb Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S11-2111-Rev. E, 07-Nov-11 2 Document Number: 65352 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr SQ2360EES www.vishay.com TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 0.005 10-2 Vishay Siliconix 0.004 I GSS - Gate Current (mA) I GSS - Gate Current (A) 10-4 0.003 TJ = 25 °C 0.002 TJ = 150 °C 10-6 TJ = 25 °C 10-8 0.001 0.000 0 6 12 18 24 VGS - Gate-to-Source Voltage (V) 30 10-10 0 6 12 18 24 VGS - Gate-to-Source Voltage (V) 30 Gate Current vs. Gate-Source Voltage 12 VGS = 10 V thru 5 V 10 VGS = 4 V I D - Drain Current (A) 8 I D - Drain Current (A) 8 10 12 Gate Current vs. Gate-Source Voltage 6 6 4 4 TC = 25 °C TC = 125 °C TC = - 55 °C 2 VGS = 3 V 2 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 0 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Output Characteristics 10 0.25 Transfer Characteristics g fs - Transconductance (S) TC = - 55 °C 6 TC = 25 °C 4 TC = 125 °C 2 R DS(on) - On-Resistance (Ω) 8 0.20 0.15 0.10 VGS = 4.5 V VGS = 10 V 0.05 0 0.0 0.00 0.4 0.8 1.2 1.6 2.0 0 2 I D - Drain Current (A) 4 6 8 ID - Drain Current (A) 10 12 Transcon.


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