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2SC3417

Sanyo Semicon Device

PNP/NPN Epitaxial Planar Silicon Transistors

Ordering number:ENN1390D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1353/2SC3417 Ultrahigh-Definition CRT Display...


Sanyo Semicon Device

2SC3417

File Download Download 2SC3417 Datasheet


Description
Ordering number:ENN1390D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1353/2SC3417 Ultrahigh-Definition CRT Display Video Output Applications Applications · Ultrahigh-definition CRT display. · Color TV chroma output, high-voltage driver applications. Package Dimensions unit:mm 2009B [2SA1353/2SC3417] 8.0 4.0 2.7 Features · High breakdown voltage : VCEO≤300V. · Excellent high frequency characteristics : Cre=1.8pF(typ). · Adoption of MBIT process. 3.0 1.5 7.0 1.6 0.8 0.8 0.6 3.0 11.0 15.5 0.5 ( ) : 2SA1353 2.4 4.8 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 1.2 1 2 3 1 :Emitter 2 : Collector 3 : Base SANYO : TO-126 Ratings (–)300 (–)300 (–)5 (–)100 (–)200 1.2 Unit V V V mA mA W W Tc=25˚C 7 150 –55 to +150 ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE fT D 60 to 120 E 100 to 200 VCB=(–)200V, IE=0 VEB=(–)4V, IC=0 VCE=(–)10V, IC=(–)10mA VCE=(–)30V, IC=(–)10mA F 160 to 320 40 70 Conditions Ratings min typ max (–)0.1 (–)0.1 320 MHz Unit µA µA * : 2SA1353/2SC3417 are classified by 10mA hFE as follows : Rank hFE C 40 to 80 Continued on next page. Any and all SANYO products described or co...




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