SQ3456BEV

www.DataSheet.co.kr SQ3456BEV Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration TSOP-6 Top V iew 1 6 FEATURES 30 0.035 0.052 7.8 Single (1, 2, 5, 6) D Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET Compliant to RoHS Directive 2002/95/EC AEC-Q101 Qualifiedc 3 mm 2 5 (3) G 3 4 2.85 mm Marking Code: 8Lxxx (4) S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free TSOP-6 SQ3456BEV-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) Pulsed Drain Currenta Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C SYMBOL VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT 30 ± 20 7.8 4.5 5 31 10 5 4 1.3 - 55 to + 175 mJ W °C A UNIT V THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. When mounted on 1" square PCB (FR-4 material). c. Parametric verification ongoing. PCB Mountb SYMBOL RthJA RthJF LIMIT 110 38 UNIT °C/W Document Number: 67934 S11-0959-Rev. A, 06-Jun-11 www.vishay.com 1 Datasheet pdf - http://www.DataSheet4U.net/ This document is s...