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VBT1045CBP Datasheet, Equivalent, Rectifier Rectifier.Trench MOS Barrier Schottky Rectifier Rectifier Trench MOS Barrier Schottky Rectifier Rectifier |
| Part | VBT1045CBP |
|---|---|
| Description | Trench MOS Barrier Schottky Rectifier Rectifier |
| Feature | www. DataSheet. co. kr New Product VBT104 5CBP Vishay General Semiconductor Tren ch MOS Barrier Schottky Rectifier for P V Solar Cell Bypass Protection Ultra Lo w VF = 0. 34 V at IF = 2. 5 A TMBS ® TO- 263AB FEATURES • Trench MOS Schottky technology • Low forward voltage dro p, low power losses • High efficiency operation • Meets MSL level 1, per J -STD-020, LF maximum peak of 245 °C 2 K • Not recommended for PCB bottom side wave mounting • Compliant to RoH S Directive 2002/95/EC and in accordanc e to WEEE 2002/96/EC 1 VBT1045CBP PIN 1 PIN 2 K HEATSINK TYPICAL APPLICATION S For use in solar cell junc . |
| Manufacture | Vishay |
| Datasheet |
| Part | VBT1045CBP |
|---|---|
| Description | Trench MOS Barrier Schottky Rectifier Rectifier |
| Feature | www. DataSheet. co. kr New Product VBT104 5CBP Vishay General Semiconductor Tren ch MOS Barrier Schottky Rectifier for P V Solar Cell Bypass Protection Ultra Lo w VF = 0. 34 V at IF = 2. 5 A TMBS ® TO- 263AB FEATURES • Trench MOS Schottky technology • Low forward voltage dro p, low power losses • High efficiency operation • Meets MSL level 1, per J -STD-020, LF maximum peak of 245 °C 2 K • Not recommended for PCB bottom side wave mounting • Compliant to RoH S Directive 2002/95/EC and in accordanc e to WEEE 2002/96/EC 1 VBT1045CBP PIN 1 PIN 2 K HEATSINK TYPICAL APPLICATION S For use in solar cell junc . |
| Manufacture | Vishay |
| Datasheet |
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