VBT2045CBP

www.DataSheet.co.kr New Product VBT2045CBP Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.33 V at IF = 5.0 A TMBS ® TO-263AB FEATURES Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 K Not recommended for PCB bottom side wave mounting Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 1 VBT2045CBP PIN 1 PIN 2 K HEATSINK TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TOP max. 2 x 10 A 45 V 160 A 0.41 V 150 °C MECHANICAL DATA Case: TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage per device Maximum average forward rectified current (fig. 1) per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Operating junction and storage temperature range Junction temperature in DC forward current without reverse bias, t ≤ 1 h Notes (1...