2SC3419

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3419 Medium-Power Amplifier Applications. 2SC3419 Unit: mm Low saturation voltage: VCE (sat) = 0.25 V (typ.) (IC = 500 mA, IB = 50 mA) High collector power dissipation: PC = 1.2 W (Ta = 25°C) Complementary to 2SA1356 Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage VCBO 40 V VCEO 40 V Emitter-base voltage Collector current Base current VEBO IC IB 5V 800 mA 80 mA Collector power dissipation Ta = 25°C Tc = 25°C PC 1.2 W 5 JEDEC ― Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEITA TOSHIBA ― 2-8H1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 0.82 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown vol...