2SC3459

Ordering number:EN1591C NPN Triple Diffused Planar Silicon Transistor 2SC3459 800V/4.5A Switching Regulator Applications Features · High breakdown voltage and high reliability. · Fast switching speed (tf : 0.1µs typ). · Wide ASO. · Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3459] Specifications 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions PW≤300µs, Duty Cycle≤10% Tc=25˚C Ratings 1100 800 7 4.5 15 2 90 150 –55 to +150 Unit V V V A A A W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Ratings min typ Collector Cutoff Current ICBO VCB=800V, IE=0 Emitter Cutoff Current IEBO VEB=5V, IC=0 DC Current Gain hFE1 hFE2 VCE=5V, IC=0.3A VCE=5V, IC=1.5A 10* 8 Gain-Bandwidth Product fT VCE=10V, IC=0.3A Output Capacitance Cob VCB=10V, f=1MHz * : The hFE1 of the 2SC3459 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle. 15 90 10 K 20 15 L 30 20 M 40 max 10 10 40* Unit µA µA MHz pF Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support system...