2SC3496A

Power Transistors 2SC3496, 2SC3496A Silicon NPN triple diffusion planar type For power switching 8.5±0.2 Unit: mm 3.4±0.3 ■ Features 6.0±0.2 1.0±0.1 3.0–+00..24 4.4±0.5 14.4±0.5 10.0±0.3 1.5±0.1 High-speed switching 1.5–+00.4 High collector-base voltage (Emitter open) VCBO 4.4±0.5 2.0±0.5 Satisfactory linearity of forward current transfer ratio hFE N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment ■ Absolute Maximum Ratings TC = 25°C / Parameter Symbol Rating Unit 0 to 0.4 0.8±0.1 2.54±0.3 1.4±0.1 R = 0.5 R = 0.5 1.0±0.1 0.4±0.1 5.08±0.5 123 (8.5) (6.0) 1.3 (7.6) (1.5) e Collector-base voltage 2SC3496 VCBO 900 V pe) (Emitter open) 2SC3496A 1 000 nc d ge. ed ty Collector-emitter voltage 2SC3496 VCES 900 V sta tinu (E-B short) 2SC3496A 1 000 a e cycle iscon Collector-emitter voltage 2SC3496 VCEO 800 V life d, d (Base open) 2SC3496A 900 n u duct type Emitter-base voltage (Collector open) VEBO 7 V te tin Pro ued Basecurrent IB 0.3 A four ntin Collector current IC 1 A wing disco Peak collector current ICP 2 A in n follo ed Collector power PC 30 W es plan dissipation Ta = 25°C 1.3 a o includ type, Junction temperature Tj 150 °C c ed ce Storage temperature Tstg −55 to +150 °C M is continuintenan ■ Electrical Characteristics TC = 25°C ± 3°C /Dis ma Parameter Symbol Conditions D ance type, Collector-emitter voltage ten ce (Bas...