Automotive N-Channel MOSFET
www.DataSheet.co.kr
SQ7414EN
www.vishay.com
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SU...
Description
www.DataSheet.co.kr
SQ7414EN
www.vishay.com
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration
PowerPAK 1212-8
FEATURES
60 0.025 0.036 5.6 Single
D
TrenchFET® Power MOSFET Low Thermal Resistance PowerPAK® 1212-8 Package with 1.07 mm Profile PWM Optimized AEC-Q101 Qualified 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC
3.30 mm
S 1 2 3 S S
3.30 mm
G
G 4
D 8 7 6 5 D D D
S N-Channel MOSFET
Bottom View
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free PowerPAK1212-8 SQ7414EN-T1-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e L = 0.1 mH TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C SYMBOL VDS VGS ID IS IDM IAS EAS PD TJ, Tstg 10 s 60 ± 20 8.7 7 3.2 30 19 18 3.8 2 - 55 to + 175 260 STEADY STATE 60 ± 20 5.6 4.4 1.3 30 19 18 1.5 0.8 - 55 to + 175 260 mJ W °C A UNIT V
THERMAL RESISTANCE RATINGS
PARAMETER Junction-to-Ambient Junction-to-Case (Drain) t 10 s PCB Mountc SYMBOL RthJA RthJC TYPICAL 26 65 1.9 MAXIMUM 33 81 2.4 °C/W UNIT
Notes a. Package limited. b. Pulse test; pulse width ...
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