2SC3506

Power Transistors 2SC3506 Silicon NPN triple diffusion planar type For high-speed switching Unit: mm 15.0±0.3 5.0±0.2 (0.7) ■ Features 11.0±0.2 (3.2) High-speed switching 21.0±0.5 15.0±0.2 High collector-base voltage (Emitter open) VCBO φ 3.2±0.1 Satisfactory linearity of forward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw 2.0±0.2 2.0±0.1 ■ Absolute Maximum Ratings TC = 25°C 1.1±0.1 0.6±0.2 / Parameter Symbol Rating Unit 16.2±0.5 (3.5) Solder Dip e Collector-base voltage (Emitter open) VCBO 1 000 V c type) Collector-emitter voltage (E-B short) VCES 1 000 V n d ge. ed Collector-emitter voltage (Base open) VCEO 800 V le sta ntinu Emitter-base voltage (Collector open) VEBO 7 V a e cyc isco Collector current IC 3 A life d, d Base current IB 2 A n u duct type Peak collector current ICP 6 A te tin Pro ued Collector power dissipation PC 70 W four ntin Ta = 25°C 3.0 wing disco Junction temperature Tj 150 °C in n follo ed Storage temperature Tstg −55 to +150 °C a o includestype, plan ■ Electrical Characteristics TC = 25°C ± 3°C c ed ce Parameter Symbol Conditions M is ntinu tenan Collector-emitter sustaining voltage * VCEO(SUS) IC = 0.5 A, L = 50 mH isco ain Collector-base cutoff current (Emitter open) ICBO VCB = 1 000 V, IE = 0 e/D e, m Emitter-base cutoff current (Collector open) IEBO VEB = 7 V, IC = 0 D nanc e typ Forward current transfer ratio hFE VCE...