2SC3512

2SC3512 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline TO-92 (2) 1. Base 2. Emitter 3. Collector 3 2 1 2SC3512 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 11 2 50 600 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to cutoff current Emitter cutoff current Collector cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol V(BR)CBO I CEO I EBO I CBO hFE Cob fT PG NF Min 15 — — — 50 — — — — Typ — — — — 120 1.2 6.0 10.5 1.6 Max — 1 1 1 250 1.6 — — — pF GHz dB dB Unit V µA µA µA Test conditions I C = 10 µA, IE = 0 VCE = 10 V, RBE = ∞ VEB = 1 V, IC = 0 VCB = 12 V, IE = 0 VCE = 5 V, IC = 20 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 mA VCE = 5 V, IC = 20 mA, f = 900 MHz VCE = 5 V, IC = 5 mA, f = 900 MHz 2 2SC3512 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 1,000 Collector Current IC (mA) 20 Typical Output Characteristics 180 160 140 120 800 16 600 400 12 100 80 8 60 40 200 4 IB = 20 µA 0 50 100 150 Ambient Temperature Ta (°C) 0 2 4 6 8 10 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current 200 Gain Bandwidth Produc...