Document
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC3515
2SC3515
HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications
Unit: mm
· High voltage: VCBO = 300 V, VCEO = 300 V · Low saturation voltage: VCE (sat) = 0.5 V (max) · Small collector output capacitance: Cob = 3 pF (typ.) · Complementary to 2SA1384 · Small flat package · PC = 1.0 to 2.0 W (mounted on ceramic substrate)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current
Collector power dissipation
Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC PC (Note 1)
Tj Tstg
300 300
6 100 20 500
1000
150 −55 to 150
Note 1: Mounted on ceramic substrate (250 mm2 × 0.8 mmt)
Unit V V V mA mA
mW
°C °C
PW-MINI JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
1 2002-08-13
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance
ICBO
VCB = 300 V, IE = 0
IEBO
VEB = 6 V, IC = 0
V (BR) CBO IC = 0.1 mA, IE = 0
V (BR) CEO IC = 1 mA, IB = 0
hFE (1) (Note 2)
VCE = 10 V, IC = 20 mA
hFE (2) VCE (sat) VBE (sat)
fT Cob
VCE = 10 V, IC = 20 mA IC = 20 mA, IB = 2 mA IC = 20 mA, IB = 2 mA VCE = 10 V, IC = 20 mA VCB = 20 V, IE = 0, f = 1 MHz
Note 2: hFE (1) classification R: 30 to 90, O: 50 to 150
Marking
Type name hFE classification
IO
2SC3515
Min Typ. Max Unit
― ― 0.1 µA
― ― 0.1 µA
300 ―
―
V
300 ―
―
V
30 ― 150 ―
20 ― ―
― ― 0.5
V
― ― 1.0
V
50 80 ― MHz
― 3
4 pF
2 2002-08-13
Collector current IC (mA)
120 100
80 60 40 20
0 0
IC – VCE (low voltage region)
Common emitter Ta = 25°C 10
5
3 2 1 0.8 0.6 0.5 0.4 0.3 0.2 IB = 0.1 mA
0 2 4 6 8 10 12 14
Collector-emitter voltage VCE (V)
Collector current IC (mA)
2SC3515
120 Common emitter
Ta = 100°C 100
IC – VCE (low voltage region)
10
7 80 5
4 60 3
2
1 40 0.6
0.4 0.2 20 IB = 0.1 mA
0 0 0 2 4 6 8 10 12 14
Collector-emitter voltage VCE (V)
Collector current IC (mA)
120 100
80 60 40 20
0 0
IC – VCE (low voltage region)
Common emitter 10 5 Ta = -55°C
3 2
1
0.8
0.6
0.5 0.4 0.3
0.2 IB = 0.1 mA
0
2 4 6 8 10 12 14
Collector-emitter voltage VCE (V)
Collector current IC (mA)
12 10 100
8
IC – VCE (low current region)
90 80
70
Common emitter Ta = 25°C
6 60 50
4 40 30
2 20 IB = 10 mA
00 0 40 80 120 160 200 240 280
Collector-emitter voltage VCE (V)
Collector current IC (mA)
12 80
10 8
IC – VCE (low current region)
Common emitter 70 Ta = 100°C
60 50
6 40
30 4
20 2 IB = 10 mA
0 0 0 40 80 120 160 200 240 280
Collector-emitter voltage VCE (V)
Collector current IC (mA)
10 Common emitter Ta = -55°C
8
IC –.