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HIT673 Dataheets PDF



Part Number HIT673
Manufacturers Renesas
Logo Renesas
Description Silicon PNP Epitaxial
Datasheet HIT673 DatasheetHIT673 Datasheet (PDF)

www.DataSheet.co.kr HIT673 Silicon PNP Epitaxial REJ03G1608-0100 Rev.1.00 Nov 28, 2007 Features • Low frequency power amplifier • Complementary pair with HIT1213 Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage tempera.

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www.DataSheet.co.kr HIT673 Silicon PNP Epitaxial REJ03G1608-0100 Rev.1.00 Nov 28, 2007 Features • Low frequency power amplifier • Complementary pair with HIT1213 Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: PW ≤ 10 ms, Duty cycle ≤ 20% Symbol VCBO VCEO VEBO IC IC (peak) Note PC Tj Tstg Ratings –50 –50 –5 –0.5 –1.0 0.4 150 –55 to +150 Unit V V V A A W °C °C REJ03G1608-0100 Rev.1.00 Nov 28, 2007 Page 1 of 4 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr HIT673 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE1 VCE(sat) VBE(on) Min. –50 –50 –5 — — 60 — Typ — — — — — — — Max. — — — –500 –500 320 –0.6 Unit V V V nA nA — V Test Conditions IC = –10 µA, IE = 0 IC = –0.1 mA, RBE = ∞ IE = –10 µA, IC = 0 VCB = –50 V, IE = 0 VEB = –5 V VCE = –3 V, IC = –10 mA IC = -150 mA, IB = –15 mA VCE = –3V, IC = –10 mA — — –1.2 V REJ03G1608-0100 Rev.1.00 Nov 28, 2007 Page 2 of 4 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr HIT673 Main Characteristics Maximum Collector Dissipation Curve Collector Power Dissipation Pc (mW) 600 500 400 300 200 100 0 -100 Typical Output Characteristics (1) -0.7 mA -0.6 mA Collector Current IC (mA) -80 -0.5 mA -0.4 mA -0.3 mA P C = 40 0 -60 m W -40 -0.2 mA -0.1 mA IB = 0 0 -2 -4 -6 -8 -10 -20 0 50 100 150 0 Ambient Temperature Ta (°C) Collector to Emitter Voltage VCE (V) Typical Output Characteristics (2) -500 -100 Typical Transfer Characteristics VCE = -3 V Collector Current IC (mA) -400 Collector Current IC (mA) -300 -7 mA -6 mA -5 mA -4 mA -3 mA Ta = 75°C -10 25°C -2 mA -200 -1 mA -100 -1 -25°C PC = 400 mW IB = 0 0 0 -2 -4 -6 -8 -10 -0.1 0 -0.2 -0.4 -0.6 -0.8 -1.0 Collector to Emitter Voltage VCE (V) Base to Emitter Voltage VBE (V) DC Current Transfer Ratio vs. Collector Current Gain Bandwidth Product fT (MHz) 250 350 300 250 200 150 100 50 0 -1 Gain Bandwidth Product vs. Collector Current VCE = -3 V DC Current Transfer Ratio hFE VCE = -3 V 200 Ta = 75°C 25°C -25°C 150 100 50 0 -1 -10 -100 -1000 -10 -100 -1000 Collector Current IC (mA) Collector Current IC (mA) REJ03G1608-0100 Rev.1.00 Nov 28, 2007 Page 3 of 4 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr HIT673 Package Dimensions Package Name TO-92(1) JEITA Package Code SC-43A RENESAS Code PRSS0003DA-A Previous Code TO-92(1) / TO-92(1)V MASS[Typ.] 0.25g Unit: mm 4.8 ± 0.3 3.8 ± 0.3 2.3 Max 0.55 Max 0.7 0.60 Max 12.7 Min 5.0 ± 0.2 0.5 Max 1.27 2.54 Ordering Information Part Name HIT673-EQ HIT673-TZ-EQ Quantity 2500 pcs. 2500 pcs. Shipping Container Bulk, Vinyl Bag Hold Box, Radial Taping Note: This product is designed for consumer use and not for automotive. REJ03G1608-0100 Rev.1.00 Nov 28, 2007 Page 4 of 4 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this docum.


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