HIT8050-N

www.DataSheet.co.kr HIT8050-N Silicon NPN Epitaxial REJ03G1611-0100 Rev.1.00 Nov 28, 2007 Features Low frequency power amplifier Complementary pair with HIT8550-N Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: PW ≤ 10 ms, Duty cycle ≤ 20% Symbol VCBO VCEO VEBO IC IC (peak) Note PC Tj Tstg Ratings 45 25 6 0.7 1.0 0.625 150 –55 to +150 Unit V V V A A W °C °C REJ03G1611-0100 Rev.1.00 Nov 28, 2007 Page 1 of 4 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr HIT8050-N Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(on) Min. 45 25 6 — — 45 85 — — Typ — — — — — — — — — Max. — — — 500 500 — 330 0.5 1.0 Unit V V V nA nA — — V V Test Conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 45 V, IE = 0 VEB = 6 V VCE = 1 V, IC = 5 mA VCE = 1 V, IC = 100 mA IC = 500 mA, IB = 50 mA VCE = 3 V, IC = 10 mA Main Characteristic...