HIT8550-N

HIT8550-N Silicon PNP Epitaxial Features Low frequency power amplifier Complementary pair with HIT8050-N Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) REJ03G1610-0100 Rev.1.00 Nov 28, 2007 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: PW ≤ 10 ms, Duty cycle ≤ 20% 3 2 1 Symbol VCBO VCEO VEBO IC IC (peak) Note PC Tj Tstg Ratings –45 –25 –6 –0.7 –1 0.625 150 –55 to +150 (Ta = 25°C) Unit V V V A A W °C °C REJ03G1610-0100 Rev.1.00 Nov 28, 2007 Page 1 of 4 HIT8550-N Electrical Characteristics Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage (Ta = 25°C) Symbol Min. Typ Max. Unit Test Conditions V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(on) –45 –25 –6 — — 45 85 — — — — V IC = –10 µA, IE = 0 — — V IC = –1 mA, RBE = ∞ — — V IE = –10 µA, IC = 0 — –500 nA VCB = –45 V, IE = 0 — –500 nA VEB = –6 V — — — VCE = –1 V, IC = –5 mA — 330 — VCE = –1 V, IC = –100 mA — –0.5 V IC = –500 mA, IB = –50 mA — –1.0 V VCE = –3 V, IC = –10 mA Main Characteristics Collector Power Dissipation ...