2SC3576

Ordering number:EN1799D NPN Epitaxial Planar Silicon Transistor 2SC3576 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications · LF general-purpose amplifiers, various drivers, muting circuit. Features · Adoption of FBET process. · High DC current gain (hFE=800 to 3200). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO (VEBO≥15V). Package Dimensions unit:mm 2033 [2SC3576] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) VCB=20V, IE=0 VEB=10V, IC=0 VCE=5V, IC=10mA VCE=10V, IC=10mA VCB=10V, f=1MHz IC=200mA, IB=4mA IC=200mA, IB=4mA B : Base C : Collector E : Emitter SANYO : SPA Ratings 30 25 15 300 500 60 300 150 –55 to +150 Unit V V V mA mA mA mW ˚C ˚C Ratings min typ 800 1500 250 2.7 0.12 0.85 max 0.1 0.1 3200 0.5 1.2 Unit µA µA MHz pF V V Any and all SANYO products described or contained herein do not have specifications that can handle applications that require e...