2SC3583

DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3583 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Lownoise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface process (DNP process) which is an NEC proprietary new fabrication technique. PACKAGE DIMENSIONS (Units: mm) 2.8±0.2 0.4 −0.05 +0.1 1.5 0.65 −0.15 +0.1 0.95 0.95 FEATURES NF Ga 1.2 dB TYP. 13 dB TYP. @f = 1.0 GHz @f = 1.0 GHz 2.9±0.2 2 ABSOLUTE MAXIMUM RATINGS (TA = 25
C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 20 10 1.5 65 200 150 65 to +150 V V V mA mW
C
C 0.3 Marking 1.1 to 1.4 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25
C) CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed-Back Capacitance Insertion Power Gain Maximum Available Gain Noise Figure SYMBOL ICBO IEBO hFE * fT Cre ** 50 100 9 0.35 11 13 15 1.2 2.5 0.9 MIN. TYP. MAX. 1.0 1.0 250 GHz pF dB dB dB UNIT TEST CONDITIONS VCB = 10 V, IE = 0 VEB = 1 V, IE = 0 VCE = 8 V, IC = 20 mA VCE = 8 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1....