2SC3585

DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3585 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR DESCRIPTION The 2SC3585 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. The 2SC3585 features excellent power gain with very low-noise figures. The 2SC3585 employs direct nitride passivated base surface process (DNP process) which is an NEC proprietary new fabrication technique which provides excellent noise figures at high current values. This allows excellent associated gain and very wide dynamic range. PACKAGE DIMENSIONS (Units: mm) 2.8±0.2 0.4 −0.05 +0.1 1.5 0.65 −0.15 +0.1 0.95 0.95 FEATURES NF Ga 1.8 dB TYP. 9 dB TYP. @f = 2.0 GHz @f = 2.0 GHz 2.9±0.2 2 ABSOLUTE MAXIMUM RATINGS (TA = 25
C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 20 10 1.5 35 200 150 65 to +150 V V V mA mW
C
C 0.3 1.1 to 1.4 Marking PIN CONNECTIONS 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25
C) CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed-Back Capacitance Insertion Power Gain Maximum Available Gain Noise Figure SYMBOL ICBO IEBO hFE * fT Cre ** 50 100 10 0.3 2 MIN. TYP. MAX. 1.0 1.0 250 UNIT TEST CONDITIONS VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 6 V, IC = 1...