2SC3595

Ordering number:EN1756B Applications · Ultrahigh-definition CRT display. · Video output driver. · Wideband amplifiers. Features · High fT : fT typ=2.0GHz. · High current : IC=500mA. NPN Epitaxial Planar Silicon Transistor 2SC3595 Ultrahigh-Definition CRT Display Video Output Applications Package Dimensions unit:mm 2009B [2SC3595] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=20V, IE=0 Emitter Cutoff Current IEBO VEB=2V DC Current Gain hFE1 hFE2 VCE=5V, IC=50mA VCE=5V, IC=500mA Gain-Bandwidth Product fT VCE=5V, IC=100mA Collector-to-Emitter Saturation Voltage VCE(sat) IC=300mA, IB=30mA Base-to-Emitter Saturation Voltage VBE(sat) IC=300mA, IB=30mA * : The 2SC3595 is classified by 50mA hFE as follows : 40 C 80 60 D 120 100 E 200 1 : Emitter 2 : Collector 3 : Base JEDEC : TO-126 Ratings 30 20 3 500 1000 1.2 5 150 –55 to +150 Unit V V V mA mA W W ˚C ˚C Ratings min typ 40* 20 2.0 0.25 0.92 max 0.1 5.0 200* 0.6 1.2 Unit µA µA GHz V V Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliabilit...