2SC3604

DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3604 is an NPN epitaxial transistor designed for lownoise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range. PACKAGE DIMENSIONS (in mm) E 3.8 MIN. FEATURES Low noise : NF = 1.6 dB TYP. @ f = 2.0 GHz High power gain : GA = 12 dB TYP. @ f = 2.0 GHz C 3.8 MIN. 3.8 MIN. B PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PT (TC = 25 °C) Tj Tstg RATING 20 10 1.5 65 580 200 -65 to +150 UNIT V V V mA mW °C °C E PIN CONNECTIONS E: Emitter C: Collector 0.5 ± 0.05 B: Base 2.55 ± 0.2 φ 2.1 1.8 MAX. 0.55 3.8 MIN. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) 45 ° ELECTRICAL CHARACTERISTICS (TA = 25 °C) PARAMETER Collector Cut-off Current Emitter Cut-off Current DC Current Gain Gain Bandwidth Product Reverse Transfer Capacitance Noise Figure Insertion Gain Maximum Available Gain Power Gain SYMBOL ICBO IEBO hFE fT Cre NFNote |S21e|2 MAG GA TEST CONDITIONS VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 8 V, IC = 20 mA Pulse VCE = 8 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 8 V, IC = 7 mA, f = 2.0 GHz VCE = 8 V, IC = 20 mA, f = 2.0 GHz VCE = 8 V, IC = 20 mA, f = 2.0 GHz VCE = 8 V, IC = 7 mA, f = 2.0 GHz 9.0 50 ...