GWM160-0055X1

www.DataSheet.co.kr GWM 160-0055X1 Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 S3 G5 S5 L1 L2 L3 G4 S4 G6 S6 L- VDSS = 55 V = 150 A ID25 RDSon typ. = 2.7 mW Straight leads Surface Mount Device G2 S2 MOSFETs Symbol VDSS VGS ID25 ID90 IF25 IF90 Symbol TC = 25°C TC = 90°C TC = 25°C (diode) TC = 90°C (diode) Conditions Conditions TJ = 25°C to 150°C Maximum Ratings 55 ± 20 150 115 120 75 V V A A A A Applications AC drives in automobiles - electric power steering - starter generator in industrial vehicles - propulsion drives - fork lift drives in battery supplied equipment Features MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode package: - high level of integration - high current capability 300 A max. - aux. terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer Space and weight savings Package options 2 lead forms available - straight leads (SL) - SMD lead version (SMD) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. 2.7 4.5 2.5 TJ = 25°C TJ = 125°C 0.1 0.2 105 tbd tbd 140 125 550 120 0.17 0.60 0.004 1.3 1.0 1.6 max. 3.3 4.5 1 mW mW V µA mA µA nC nC nC ns ns ns ns mJ mJ mJ K/W K/W RDSon VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Erecoff RthJC RthJH 1) 1) on chip level at ; ID = 100 A VGS = 10 V VDS = 20 V;...