2SB649

isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current-IC=-1.5A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-120V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD669 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -3 A 20 W 1 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB649 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Vltage IE= -1mA ; IC=0 VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA VBE(on) Base-Emitter On Voltage IC= -150mA ; VCE= -5V ICBO Collector Cutoff Current VCB= -160V; IE= 0 hFE-1 DC Current Gain IC= -150mA ; VCE= -5V hFE-2 DC Current Gain IC=-500mA ; VCE= -5V  hFE-1 Classifications B C D 60-120 100-200 160-320 2SB649 MIN...