2SC3646

Ordering number:ENN2005A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1416/2SC3646 High-Voltage Switching Applications Features · Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Fast switching time. · Ultrasmall size making it easy to provide high- density, small-sized hybrid ICs. Package Dimensions unit:mm 2038A [2SA1416/2SC3646] 4.5 1.6 1.5 1.0 2.5 4.25max ( ) : 2SA1416 Specifications Absolute Maximum Ratings at Ta = 25˚C 0.4 0.5 3 1.5 2 3.0 1 0.75 0.4 1 : Base 2 : Collector 3 : Emitter SANYO : PCP Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Storage Temperature Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Moutned on ceramic board (250mm2×0.8mm) Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=(–)100V, IE=0 Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 DC Current Gain hFE VCE=(–)5V, IC=(–)100mA Gain-Bandwidth Product fT VCE=(–)10V, IC=(–)100mA * : The 2SA1416/2SC3646 are classified by 100mA hFE as follows : Rank R S T Marking hFE 100 to 200 2SA1416 : AB 2SC3646 : CB 140 S 280 200 to 400 hFE rank : R, S, T Ratings (–)120 (–)100 (–)6 (–)1 (–)2 500 1.3 150 –55 to +150 Unit V V V A A mW W ˚C ˚C Ratings min typ max Unit (–)100 nA (–)100 nA 100* 400* 120 MHz Continued on next page. Any and all SANYO produ...