2SC3665

2SC3665 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3665 Audio Power Amplifier Applications Driver-Stage Amplifier Applications Unit: mm Complementary to 2SA1425. Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 120 120 5 800 80 1000 150 −55 to 150 Unit V V V mA mA mW °C °C JEDEC JEITA TOSHIBA ― ― 2-7D101A Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol ICBO IEBO V (BR) CEO V (BR) EBO hFE (Note) VCE (sat) VBE fT Cob Test Condition VCB = 120 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 IE = 1 mA, IC = 0 VCE = 5 V, IC = 100 mA IC = 500 mA, IB = 50 mA VCE = 5 V, IC = 500 mA VCE = 5 V, IC = 100 mA VCB = 10 V, IE = 0, f = 1 MHz Weight: 0.2 g (typ.) Min ― ― 120 5 80 ― ― ― ― Typ. ― ― ― ― ― ― ― 120 ― Max 100 100 ― ― 240 1.0 1.0 ― 30 Unit nA nA V V V V MHz pF Note: hFE classification O: 80 to 160, Y: 120 to 240 Marking C3665 Part No. (or abbreviation code) Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2004-07-07 Free Datasheet...