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MBRP3045N

Fairchild Semiconductor

SCHOTTKY BARRIER RECTIFIER

MBRP3045N — Schottky Barrier Rectifier June 2008 MBRP3045N Schottky Barrier Rectifier Applications • Switched mode pow...


Fairchild Semiconductor

MBRP3045N

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MBRP3045N — Schottky Barrier Rectifier June 2008 MBRP3045N Schottky Barrier Rectifier Applications Switched mode power supply Freewheeling diodes Features Low forward voltage drop High frequency properties and switching speed Guard ring for over-voltage protection 1.Anode 3.Anode 1 2. Cathode TO220 www.DataSheet.co.kr Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VRRM VR IF(AV) IFSM TJ, TSTG Parameter Maximum Repetitive Reverse Voltage Maximum DC Reverse Voltage Average Rectified Forward Current @ TC = 100°C Non-repetitive Peak Surge Current (per diode) 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature Value 45 45 30 200 -65 to +150 Units V V A A °C Thermal Characteristics Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case (per diode) Value 2.2 Units °C/W Electrical Characteristics (per diode) Symbol VFM * Parameter Maximum Instantaneous Forward Voltage IF = 15A IF = 15A IF = 30A IF = 30A Maximum Instantaneous Reverse Current @ rated VR TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C Value 0.65 0.57 0.80 0.65 1 80 Units V IRM * mA * Pulse Test: Pulse Width=300μs, Duty Cycle=2% © 2008 Fairchild Semiconductor Corporation MBRP3045N Rev.A 1 www.fairchildsemi.com Datasheet pdf - http://www.DataSheet4U.net/ MBRP3045N — Schottky Barrier Rectifier Typical Performance Characteristics 100 100 TJ=150 C o Reverse Current, I R[mA] Forward Current, I F[A] 10 10 TJ=125 C o ...




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