Ordering number:EN1800E
NPN Triple Diffused Planar Silicon Transistor
2SC3675
900V/100mA High-Voltage Amplifier High-V...
Ordering number:EN1800E
NPN Triple Diffused Planar Silicon
Transistor
2SC3675
900V/100mA High-Voltage Amplifier High-Voltage Switching Applications
Applications
· High voltage amplifiers. · High-voltage switching applications. · Dynamic focus applications.
Package Dimensions
unit:mm 2010C
[2SC3675]
Features
· High breakdown voltage (VCEO min=900V). · Small Cob (Cob typ=2.8pF). · Wide ASO (Adoption of MBIT process). · High reliability (Adoption of HVP process).
JEDEC : TO-220AB EIAJ : SC46
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg
Tc=25˚C
1 : Base 2 : Collector 3 : Emitter
Conditions
Ratings 1500 900 5 100 300 10 150 –55 to +150
Unit V V V mA mA W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Output Capacitance Symbol ICBO IEBO hFE fT VCE(sat) VBE(sat) VCB=900V, IE=0 VEB=4V, IC=0 VCE=5V, IC=10mA VCE=10V, IC=10mA IC=20mA, IB=4mA IC=20mA, IB=4mA 1500 900 5 2.8 30 6 5 2 MHz V V V V V pF Conditions Ratings min typ max 10 10 Unit µA µA
V(BR)CBO IC=1mA,...