2SC3680
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) sAbsolute maximum ratings (Ta=...
2SC3680
Silicon
NPN Triple Diffused Planar
Transistor (High Voltage Switching
Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3680 900 800 7 7(Pulse14) 3.5 120(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Switching
Regulator and General Purpose
(Ta=25°C)
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=3A IC=3A, IB=0.6A IC=3A, IB=0.6A VCE=12V, IE=–2A VCB=10V, f=1MHz 100max 100max 800min 10 to 30 0.5max 1.2max 6typ 105typ
External Dimensions MT-100(TO3P)
5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1
2SC3680
Unit
µA µA
19.9±0.3
4.0
V V MHz pF
a b
ø3.2±0.1
20.0min
4.0max
V
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4
sTypical Switching Characteristics (Common Emitter)
VCC (V) 250 RL (Ω) 83 IC (A) 3 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.45 IB2 (A) –1.5 ton (µs) 1max tstg (µs) 5max tf (µs) 1max
5.45±0.1 B C E
5.45±0.1
Weight : Approx 6.0g a. Type No. b. Lot No.
I C – V CE Characteristics (Typical)
7
V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical)
Collector-Emitter Saturation Voltage V CE(s a t) (V ) Base-Emitter Saturation Voltage V B E ( s a t) (V ) (I C /I B =5)
I C – V BE Temperature Characteristics (Typical)
7 (V C E =4V)
1A
700m A
6
500mA
1
–55˚C (Cas
25˚C (C
V B E (sat)
e Temp)
p)
6 Collector Current I C (A)
Collector Current I C (A)
mp)
4
300 mA
ase Tem
4
Temp (Case
)
emp
(C
12
5˚
V C E (sat)...