Ordering number:EN1939B
NPN Triple Diffused Planar Silicon Transistor
2SC3687
Ultrahigh-Definition CRT Display Horizon...
Ordering number:EN1939B
NPN Triple Diffused Planar Silicon
Transistor
2SC3687
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Applications
· Ultrahigh-definition color display horizontal deflection output.
Package Dimensions
unit:mm 2022A
[2SC3687]
Features
· Fast speed (tf typ=100ns). · High breakdown voltage (VCBO=1500V). · High reliability (adoption of HVP process). · Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg
Tc=25˚C
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB
Conditions
Ratings 1500 800 6 8 25 150 150 –55 to +150
Unit V V V A A W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Collector-to-Emitter Sastain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage DC Current Gain Storage Time Fall Time Symbol ICES VCE=1500V, RBE=0 VCEO(sus) IC=100mA, IB=0 IEBO VEB=4V, IC=0 VCE(sat) IC=6A, IB=1.5A VBE(sat) hFE tstg tf IC=6A, IB=1.5A VCE=5V, IC=1.0A IC=6A, IB1=1.2A, IB2=–2.4A IC=6A, IB1=1.2A, IB2=–2.4A 8 3.0 0.1 0.2 µs µs Conditions Ratings min 800 1.0 5 1.5 typ max 1.0 Unit mA V mA V V
Any and all SANYO products described or contained herein do not have specifications that can handle ...