Transistors
2SC3704
Silicon NPN epitaxial planar type
For UHF band low-noise amplification
Unit: mm
■ Features • Low ...
Transistors
2SC3704
Silicon
NPN epitaxial planar type
For UHF band low-noise amplification
Unit: mm
■ Features Low noise figure NF
0.40+–00..0150 3
0.16+–00..0160
1.50–+00..0255 2.8–+00..32
High forward transfer gain S21e2
0.4±0.2
High transition frequency fT Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine packing
1
2
(0.95) (0.95)
1.9±0.1 2.90+–00..0250
5˚
(0.65)
/ ■ Absolute Maximum Ratings Ta = 25°C
10˚
e e) Parameter
Symbol Rating
Unit
c e. d typ Collector-base voltage (Emitter open) VCBO
15
V
n d stag tinue Collector-emitter voltage (Base open) VCEO
10
0 to 0.1 1.1–+00..12 1.1–+00..13
V
a e cle con Emitter-base voltage (Collector open) VEBO
2
V
lifecy , dis Collector current
IC
80
mA
n u ct ped Collector power dissipation
PC
200
mW
te tin Produ ed ty Junction temperature
Tj
150
°C
ur tinu Storage temperature
Tstg −55 to +150 °C
Marking Symbol: 2W
1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package
in n s followlianngefdodiscon ■ Electrical Characteristics Ta = 25°C ± 3°C
a o lude e, p Parameter
Symbol
Conditions
c d inc e typ Collector-base cutoff current (Emitter open) ICBO VCB = 15 V, IE = 0
tinue anc Emitter-base cutoff current (Collector open) IEBO VEB = 1 V, IC = 0
M is con inten Forward current transfer ratio
hFE1 VCE = 8 V, IC = 20 mA
/Dis ma hFE2 VCE = 1 V, IC = 3 mA
D ance type, Transition frequency
fT
VCE = 8 V, I...