2SC3749

Ordering number:EN1968A NPN Triple Diffused Planar Silicon Transistor 2SC3749 500V/3A Switching Regulator Applications Features · High breakdown voltage and high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process. · Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SC3749] Specifications 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions PW≤300µs, Duty Cycle≤10% Tc=25˚C Ratings 800 500 7 3 6 1 25 150 –55 to +150 Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance ICBO IEBO hFE1 hFE2 fT Cob VCB=500V, IE=0 VEB=5V, IC=0 VCE=5V, IC=0.3A VCE=5V, IC=1.5A VCE=10V, IC=0.3A VCB=10V, f=1MHz Ratings min typ 15* 8 18 50 max 10 10 50* * : The hFE1 of the 2SC3749 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle. 15 L 30 20 M 40 30 N 50 Unit V V V A A A W ˚C ˚C Unit µA µA MHz pF Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-suppo...